? semiconductor components industries, llc, 2011 november, 2011 ? rev. 4 1 publication order number: nss20200l/d nss20200lt1g, NSV20200LT1G 20 v, 4.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? aec ? q101 qualified and ppap capable ? nsv prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information nss20200lt1g sot ? 23 (pb ? free) 3,000 / tape & reel marking diagram collector 3 1 base 2 emitter sot ? 23 (to ? 236) case 318 style 6 http://onsemi.com ? 20 volts 4.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 65 m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 vc m vc = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) NSV20200LT1G sot ? 23 (pb ? free) 3,000 / tape & reel
nss20200lt1g, NSV20200LT1G http://onsemi.com 2 maximum ratings (t a = 25 ? c) rating symbol max unit collector-emitter voltage v ceo ? 20 vdc collector-base voltage v cbo ? 20 vdc emitter-base voltage v ebo ? 7.0 vdc collector current ? continuous i c ? 2.0 a collector current ? peak i cm ? 4.0 a electrostatic discharge esd hbm class 3b mm class c thermal characteristics characteristic symbol max unit total device dissipation t a = 25 ? c derate above 25 ? c p d (note 1) 460 3.7 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 1) 270 ? c/w total device dissipation t a = 25 ? c derate above 25 ? c p d (note 2) 540 4.3 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 2) 230 ? c/w total device dissipation (single pulse < 10 sec.) p dsingle (note 3) 710 mw junction and storage temperature range t j , t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces. 3. thermal response.
nss20200lt1g, NSV20200LT1G http://onsemi.com 3 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 20 ? ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 20 ? ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 7.0 ? ? vdc collector cutoff current (v cb = ? 20 vdc, i e = 0) i cbo ? ? ? 0.1 adc emitter cutoff current (v eb = ? 7.0 vdc) i ebo ? ? ? 0.1 adc on characteristics dc current gain (note 4) (i c = ? 10 ma, v ce = ? 2.0 v) (i c = ? 500 ma, v ce = ? 2.0 v) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 250 250 180 150 ? 300 ? ? ? ? ? ? collector ? emitter saturation voltage (note 4) (i c = ? 0.1 a, i b = ? 0.010 a) (note 5) (i c = ? 1.0 a, i b = ? 0.100 a) (i c = ? 1.0 a, i b = ? 0.010 a) (i c = ? 2.0 a, i b = ? 0.200 a) v ce(sat) ? ? ? ? ? 0.008 ? 0.065 ? 0.100 ? 0.130 ? 0.013 ? 0.090 ? 0.120 ? 0.180 v base ? emitter saturation voltage (note 4) (i c = ? 1.0 a, i b = ? 0.01 a) v be(sat) ? ? ? 0.900 v base ? emitter turn ? on voltage (note 4) (i c = ? 1.0 a, v ce = ? 2.0 v) v be(on) ? ? ? 0.900 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = 0.5 v, f = 1.0 mhz) cibo ? ? 330 pf output capacitance (v cb = 3.0 v, f = 1.0 mhz) cobo ? ? 100 pf switching characteristics delay (v cc = ? 15 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 60 ns rise (v cc = ? 15 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 120 ns storage (v cc = ? 15 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 300 ns fall (v cc = ? 15 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 130 ns 4. pulsed condition: pulse width = 300 msec, duty cycle ? 2%. 5. guaranteed by design but not tested.
nss20200lt1g, NSV20200LT1G http://onsemi.com 4 ? 55 ? c v ce(sat) = 150 ? c ic/ib = 10 25 ? c figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.1 0.15 0.2 0.25 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1.0 0.1 0.01 0.001 100 150 300 350 500 700 750 800 10 1.0 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 figure 5. base emitter turn ? on voltage vs. collector current figure 6. saturation region i c , collector current (a) i b , base current (ma) 10 1.0 0.1 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.8 0.9 1.0 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 v ce(sat) , collector emitter saturation voltage (v) h fe , dc current gain v be(sat) , base emitter saturation voltage (v) v be(on) , base emitter turn ? on voltage (v) v ce , collector ? emitter voltage (v) ic/ib = 100 25 ? c ? 55 ? c i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.1 0.15 0.2 0.35 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = 150 ? c 0.25 0.3 650 600 550 200 250 400 450 0.9 150 ? c (5.0 v) 150 ? c (2.0 v) 25 ? c (5.0 v) 25 ? c (2.0 v) ? 55 ? c (5.0 v) ? 55 ? c (2.0 v) 25 ? c ? 55 ? c 150 ? c 0.6 0.7 25 ? c ? 55 ? c 150 ? c v ce = ? 2.0 v v ce (v) i c = 500 ma 300 ma 10 ma 100 ma ic/ib = 10
nss20200lt1g, NSV20200LT1G http://onsemi.com 5 10 ms 100 ms 1 s thermal limit 1 ms c ibo (pf) figure 7. input capacitance figure 8. output capacitance v eb , emitter base voltage (v) 4.0 3.0 2.0 1.0 0 125 150 300 325 350 figure 9. safe operating area v ce (v dc ) 100 1.0 0.1 0.01 0.01 0.1 10 c ibo , input capacitance (pf) i c (a) v cb , collector base voltage (v) 16 8.0 6.0 0 50 70 90 130 170 c obo , output capacitance (pf) 150 6.0 5.0 200 225 250 275 175 c obo (pf) 2.0 4.0 14 12 10 1.0 10 110
nss20200lt1g, NSV20200LT1G http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 ? ? ? ? style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss20200l/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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